Hopping conduction in FeSi. I. The Hall, Seebeck, and Nernst effects due to hopping conduction in the top and bottom impurity Hubbard bands
نویسندگان
چکیده
FeSi is known as a narrow-gap semiconductor showing peculiar temperature dependence of transport properties, which evoked debate for over 50 years. In this study, it shown that the electrical conductivity ?, Hall coefficient RH, mobility ?H, Seebeck S, and Nernst Q can be well explained in model includes conduction valence band with parabolic dispersions together top bottom impurity Hubbard bands. particular, coincidence hump ?(T), maximum S(T), minimum ?H(T), Q(T) attributed to contribution from hopping band.
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2021
ISSN: ['2158-3226']
DOI: https://doi.org/10.1063/5.0065238